Low-Temperature Process for Growing 2D Atomically Thin Transistors on Computer Chips

Engineers \”grow\” atomically-thin transistors on top computer chips

Computer chips that are more dense and powerful will be needed for emerging AI applications like chatbots, which generate natural language. It is difficult to stack multiple transistor layers on a semiconductor chip, because they are typically made from bulk materials that are 3D box structures.

The transistors, made of ultrathin materials with a thickness of only three atoms, can be stacked to make more powerful chips. MIT researchers have demonstrated a new technology that allows them to \”grow\” 2D transition metal dichalcogenide materials directly onto a silicon chip. This will allow for denser integration.

The process of growing 2D materials directly on a silicon CMOS wand has been a challenge, as it requires temperatures around 600 degrees Celsius. Silicon transistors and circuits can be damaged by heat above 400 degrees. The interdisciplinary team at MIT has now developed a low temperature growth process that doesn’t damage the chip. This technology allows 2D transistors to directly be integrated onto standard silicon circuits.


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